Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application

Since the successful preparation of monolayer MoS2 phototransistor, two-dimensional (2D) layered materials (2DLMs) have been regarded as one most compelling candidates toward implementation next generation novel optoelectronic devices and systems. However, reported 2DLM photodetectors suffer from specific shortcomings, such low responsivity, large dark current, detectivity, on/off ratio, sluggish response rate. Herein, multilayer SnS2/few-layer van der Waals heterostructures constructed by stacking SnS2 nanosheets grown a single atmospheric pressure chemical vapor deposition method. The SnS2/MoS2 heterojunction photodetector demonstrates competitive overall performance with ratio 171, high responsivity 28.3 A W−1, an excellent detectivity 1.2 × 1013 Jones. In addition, ultrafast rate response/recovery time down to 1.38 ms/600 is achieved. properties are associated synergy type-II band alignment in-situ formed seamless floating photogate, which contribute separating photoexcited electron-hole pairs extending carrier lifetime. Taking advantage photosensitivity, device proof-of-concept optical imaging application. On whole, this study provides distinctive perspective implement advanced performance.